mpsa63 / mmbta63 / pzta63 ? pnp darlington transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mpsa63 / mmbta63 / pzta63 rev. a1 1 august 2010 mpsa63 / mmbta63 / pzta63 pnp darlington transistor features ? this device is designed for applications requiring extremely high current gain at currents to 800 ma. ? sourced from process 61. absolute maximum ratings * t a = 25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics t a = 25 c unless otherwise noted * device mounted on fr-4 pcb 1.6? 1.6? 0.06?. ** device mounted on fr-4 pcb 36mm 18mm 1.5mm; mounting pad for the collector lead min. 6cm 2 . symbol parameter value units v ces collector-emitter voltage -30 v v cbo collector-base voltage -30 v v ebo emitter-base voltage -10 v i c collector current - continuous -1.2 a t j, t stg operating and storage junction temperature range - 55 to +150 c symbol parameter max. units mpsa63 *mmbta63 **pzta63 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 125 c/w mpsa63 mmbta63 pzta63 ebc to-92 sot-23 sot-223 mark:2u c b e e b c c
mpsa63 / mmbta63 / pzta63 ? pnp darlington transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mpsa63 / mmbta63 / pzta63 rev. a1 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% typical performance characteristics symbol parameter test condition min. max. units off characteristics bv (br)ces collector-emitter breakdown voltage i c = -100 a, i b = 0 -30 v i cbo collector-cutoff current v cb = -30v, i e = 0 -100 na i ebo emitter-cutof f current v eb = -10v, i c = 0 -100 na on characteristics * h fe dc current gain i c = -10ma, v ce = -5.0v i c = -100ma, v ce = -5.0v 5,000 10,000 v ce(sat) collector-emitter saturation voltage i c = -100ma, i b = -0.1ma -1.5 v v be(on) base-emitter on voltage i c = -100ma, v ce = -5.0v -2.0 v small signal characteristics f t current gain - bandwidth product i c = -10ma, v ce = -5.0v, f = 100mhz 125 mhz figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current typical pulsed current gain vs collect or curre nt 0.01 0.1 1 0 10 20 30 40 50 i - collector current (a) h - typic al pu lsed cu r ren t gain (k) c fe 125 c 25 c - 40 c v = 5v ce collector-emitter saturation voltage vs collect or curre nt 0.001 0.01 0.1 1 0 0. 4 0. 8 1. 2 1. 6 i - collector current (a) v - collector emitter voltage (v) c cesat
mpsa63 / mmbta63 / pzta63 ? pnp darlington transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com mpsa63 / mmbta63 / pzta63 rev. a1 3 typical performance characteristics (continued) figure 3. base-emitte r saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collector cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse bias voltage figure 7. power dissipation vs ambient temperature base-emitt er saturation voltage vs coll ect or cur re nt 0.001 0.01 0.1 1 0 0. 4 0. 8 1. 2 1. 6 2 i - collector current (a) v - base emitter voltage (v) c besat 25 c - 40 c 125 c bas e e mi tter o n voltage vs collector current 0.001 0.01 0.1 1 0 0. 4 0. 8 1. 2 1. 6 2 i - collector current (a) v - base emitter on voltage (v) c be( on) v = 5v ce 25 c - 40 c 125 c collector-cutoff current vs ambie nt temperature 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - ambie nt temp erature ( c) i - collector current (na) a cbo v = 1 5v cb input and output capacitance vs reverse bias voltage 0.1 1 10 100 0 4 8 12 16 reverse voltage (v) capacitance (pf) c f = 1.0 mhz ib c ob power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 to-92 sot-23
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